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Incorporation of superlattice crystal layers in multijunction solar cells
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Mitchell, K. W. Blackslee, A. E. |
| Copyright Year | 1980 |
| Description | Superlattice layers are effective in decreasing the density of dislocations in lattice mismatched heterostructures at least four orders of magnitude. Hence it was proposed to utilize this feature of superlattices to alleviate the problems due to misfit dislocations generated in the regions between two or more photovoltaic collecting junctions. A further advantage is that the possibility is presented for using silicon as a low cost substrate as well as for the low band gap junction. In the test case, a silicon low gap cell was connected to a GaAs.7P.3 high gap cell through a connecting region containing a GaAs/GaP superlattice. |
| File Size | 427741 |
| Page Count | 6 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19810009027 |
| Archival Resource Key | ark:/13960/t6644jp8n |
| Language | English |
| Publisher Date | 1980-01-01 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Solar Cells Grain Boundaries Crystal Lattices Crystal Dislocations Epitaxy Energy Policy Substrates Fabrication Energy Technology Photovoltaic Cells Solar Energy Conversion Production Engineering Low Cost Heterojunctions Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
