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High temperature lsi
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Dening, D. C. Ragonese, L. J. Lee, C. Y. |
| Copyright Year | 1982 |
| Description | Integrated injection logic (1,2) technology for reliable operation under a -55 C to +300 C, temperature range is discussed. Experimental measurements indicate that an 80 mv signal swing is available at 300 C with 100 micro A injection current per gate. In addition, modeling results predict how large gate fan-ins can decrease the maximum thermal operational limits. These operational limits and the longterm reliability factors associated with device metallization are evaluated via specialized test mask. |
| File Size | 281520 |
| Page Count | 4 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19820007459 |
| Archival Resource Key | ark:/13960/t5fb9wh11 |
| Language | English |
| Publisher Date | 1982-01-01 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Gates Circuits Gold Bipolar Transistors Circuit Reliability Metallizing Logic Design Large Scale Integration High Temperature Environments Oscillators Fabrication Logic Circuits Carrier Injection Silicon Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
