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Silicon carbide junction field effect transistor digital logic gates demonstrated at 600 deg. c
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Neudeck, Philip G. |
| Copyright Year | 1998 |
| Description | The High Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. The HTIES team recently fabricated and demonstrated the first semiconductor digital logic gates ever to function at 600 C. |
| File Size | 63582 |
| Page Count | 2 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20050180654 |
| Archival Resource Key | ark:/13960/t4nk8970j |
| Language | English |
| Publisher Date | 1998-04-01 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Temperature Sensors Gates Circuits Refractory Materials Logic Circuits Field Effect Transistors Semiconductors Materials High Temperature Tests Waveforms Silicon Carbides Engine Monitoring Instruments Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
