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X-ray topography study of complex silicon microcircuits
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Parker, D. L. |
| Copyright Year | 1981 |
| Description | The correlation between the yield of silicon microcircuits wafers versus defects observed in X-ray topographs produced by a high speed curved wafer X-ray topographic camera was investigated. Most of the topographs were made after final wafer probe. Results indicated that most high volume silicon wafer processing does not need X-ray topography as a routine process control. It is further indicated that in changing any existing process or developing a new process the technique can be of significant benefit. |
| File Size | 4575518 |
| Page Count | 24 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19810018868 |
| Archival Resource Key | ark:/13960/t2d844x5h |
| Language | English |
| Publisher Date | 1981-04-01 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Nondestructive Tests Crystal Defects Semiconductor Devices Imaging Techniques Surface Properties X Ray Imagery Silicon Process Control Industry Microelectronics Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
