Loading...
Please wait, while we are loading the content...
Similar Documents
Study of radiation induced deep-level defects in proton irradiated algaas-gaas solar cells
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Li, S. S. |
| Copyright Year | 1980 |
| Description | Radiation induced deep-level defects (both electron and hole traps) in proton irradiated AlGaAs-GaAs p-n junction solar cells are investigated along with the correlation between the measured defect parameters and the solar cell performance parameters. The range of proton energies studied was from 50 KeV to 10 MeV and the proton fluence was varied from 10 to the 10th power to 10 to the 13th power P/sq cm. Experimental tools employed include deep-level transient spectroscopy, capacitance-voltage, current voltage, and SEM-EBIC methods. Defect and recombination parameters such as defect density and energy level, capture cross section, carrier lifetimes and effective hole diffusion lengths in n-GaAs LPE layers were determined from these measurements. |
| File Size | 325951 |
| Page Count | 7 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19810009041 |
| Archival Resource Key | ark:/13960/t5hb3xv2r |
| Language | English |
| Publisher Date | 1980-01-01 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Solar Cells Electric Potential Gallium Arsenides Crystal Defects Spectroscopic Analysis Holes Electron Deficiencies Electron Microscopy Trapping Proton Irradiation Capacitance Extraterrestrial Radiation Radiation Damage P-n Junctions Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
