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Multilevel metallization method for fabricating a metal oxide semiconductor device
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Hollis Jr., B. R. Bouldin, D. L. Feltner, W. R. |
| Copyright Year | 1978 |
| Description | An improved method is described of constructing a metal oxide semiconductor device having multiple layers of metal deposited by dc magnetron sputtering at low dc voltages and low substrate temperatures. The method provides multilevel interconnections and cross over between individual circuit elements in integrated circuits without significantly reducing the reliability or seriously affecting the yield. |
| File Size | 630973 |
| Page Count | 8 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19790006735 |
| Archival Resource Key | ark:/13960/t3421s159 |
| Language | English |
| Publisher Date | 1978-09-05 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Magnetrons Metal Oxide Semiconductors Direct Current Production Engineering Metallizing Laminates Sputtering Ntrs Nasa Technical Reports ServerĀ (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |