Loading...
Please wait, while we are loading the content...
Semiconductor etching by hyperthermal neutral beams
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 1999 |
| Description | An at-least dual chamber apparatus and method in which high flux beams of fast moving neutral reactive species are created, collimated and used to etch semiconductor or metal materials from the surface of a workpiece. Beams including halogen atoms are preferably used to achieve anisotropic etching with good selectivity at satisfactory etch rates. Surface damage and undercutting are minimized. |
| File Size | 1607988 |
| Page Count | 18 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20080006943 |
| Archival Resource Key | ark:/13960/t4km47f9z |
| Language | English |
| Publisher Date | 1999-03-16 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Neutral Beams Patents Reactivity Metal Surfaces Semiconductors Materials Halogens Etching Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |
