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Stable metallization for diamond and other materials
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 2000 |
| Description | An adherent and metallurgically stable metallization system for diamond is presented. The big improvement in metallurgical stability is attributed to the use of a ternary, amorphous Ti--Si--N diffusion barrier. No diffusion between the layers and no delamination of the metallization was observed after annealing the schemes at 400.degree. C. for 100 hours and at 900.degree. C. for 30 minutes. Thermal cycling experiments in air from -65 to 155.degree. C. and adhesion tests were performed. Various embodiments are disclosed. |
| File Size | 559118 |
| File Format | |
| Language | English |
| Publisher Date | 2000-09-05 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Metallizing Titanium Patents Silicon Nitrogen Diamonds Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |
