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Integrated photo-responsive metal oxide semiconductor circuit
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 1987 |
| Description | An infrared photoresponsive element (RD) is monolithically integrated into a source follower circuit of a metal oxide semiconductor device by depositing a layer of a lead chalcogenide as a photoresistive element forming an ohmic bridge between two metallization strips serving as electrodes of the circuit. Voltage from the circuit varies in response to illumination of the layer by infrared radiation. |
| File Size | 586028 |
| Page Count | 7 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19880004889 |
| Archival Resource Key | ark:/13960/t93827x73 |
| Language | English |
| Publisher Date | 1987-11-24 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Infrared Detectors Integrated Circuits Photosensitivity Metal Oxide Semiconductors Lead Sulfides Metallizing Linear Arrays Amplifiers Ntrs Nasa Technical Reports ServerĀ (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |