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Inversion layer solar cell fabrication and evaluation. [etching on silicon films
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Call, R. L. |
| Copyright Year | 1974 |
| Description | Inversion layer solar cells were fabricated by etching through the diffused layer on p-type silicon wafers in a comb-like contact pattern. The charge separation comes from an induced p-n junction at the surface. The inverted surface is caused by a layer of transparent material applied to the surface that either contains free positive ions or that creates donor states at the interface. Cells are increased from 3 ma I sub sc to 100 ma by application of sodium silicate. The action is unstable, however, and decays. Non-mesa contaminated oxide cells were fabricated with short circuit currents of over 100 ma measured in the sun. Cells of this type have demonstrated stability. |
| File Size | 2924424 |
| Page Count | 91 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19750012794 |
| Archival Resource Key | ark:/13960/t4km42n64 |
| Language | English |
| Publisher Date | 1974-12-01 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Solar Cells Fabrication Charge Carriers Hole Mobility P-type Semiconductors Etching Silicon Films Ntrs Nasa Technical Reports ServerĀ (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |