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Silicon solar cell process development, fabrication, and analysis
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Leung, D. C. Yoo, H. I. Iles, P. A. |
| Copyright Year | 1981 |
| Description | Work has progressed in fabrication and characterization of solar cells from ubiquitous crystallization process (UCP) wafers and LASS ribbons. Gettering tests applied to UCP wafers made little change on their performance compared with corresponding baseline data. Advanced processes such as shallow junction (SJ), back surface field (BSF), and multilayer antireflection (MLAR) were also applied. While BSF by Al paste had shunting problems, cells with SJ and BSF by evaporated Al, and MLAR did achieve 14.1% AMI on UCP silicon. The study of LASS material was very preliminary. Only a few cells with SJ, BSR, (no BSF) and MLAR were completed due to mechanical yield problems after lapping the material. Average efficiency was 10.7% AMI with 13.4% AMI for CZ controls. Relatively high minority carrier diffusion lengths were obtained. The lower than expected Jsc could be partially explained by low active area due to irregular sizes. |
| File Size | 17986956 |
| Page Count | 62 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19820012776 |
| Archival Resource Key | ark:/13960/t6tx85263 |
| Language | English |
| Publisher Date | 1981-09-30 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Solar Cells Fabrication Charge Carriers Wafers Spectrum Analysis Polycrystals Silicon Antireflection Coatings Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
