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Further research on high open circuit voltage in silicon solar cells
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Spitzer, M. B. Keavney, C. J. |
| Copyright Year | 1985 |
| Description | The results of a new research on the use of controlled dopant profiles and oxide passivation to achieve high open circuit voltage V sub oc in silicon solar cells is presented. Ion implantation has been used to obtain nearly optimal values of surface dopant concentration. The concentrations are selected so as to minimize heavy doping effects and thereby provide both high blue response and high V sub oc ion implantation technique has been successfully applied to fabrication of both n-type and p-type emitters. V sub oc of up to 660 mV is reported and AMO efficiency of 16.1% has been obtained. |
| File Size | 518588 |
| Page Count | 13 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19860008372 |
| Archival Resource Key | ark:/13960/t6838ph7c |
| Language | English |
| Publisher Date | 1985-01-01 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Solar Cells Additives Ion Implantation P-type Semiconductors Passivity Substrates Open Circuit Voltage Silicon Dioxide Thin Films Semiconductors Materials N-type Semiconductors Silicon Emitters Transparence Energy Conversion Efficiency Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
