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Further study of inversion layer mis solar cells
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Ho, Fat Duen |
| Copyright Year | 1992 |
| Description | Many inversion layer metal-insulator-semiconductor (IL/MIS) solar cells have been fabricated. As of today, the best cell fabricated by us has a 9.138 percent AMO efficiency, with FF = 0.641, V(sub OC) = 0.557 V, and I(sub SC) = 26.9 micro A. Efforts made for fabricating an IL/MOS solar cell with reasonable efficiencies are reported. The more accurate control of the thickness of the thin layer of oxide between aluminum and silicon of the MIS contacts has been achieved by using two different process methods. Comparison of these two different thin oxide processings is reported. The effects of annealing time of the sample are discussed. The range of the resistivity of the substrates used in the IL cell fabrication is experimentally estimated. Theoretical study of the MIS contacts under dark conditions is addressed. |
| File Size | 608065 |
| Page Count | 23 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19920013143 |
| Archival Resource Key | ark:/13960/t5gb70x8k |
| Language | English |
| Publisher Date | 1992-04-13 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Solar Cells Crystal Growth Annealing Aluminum Oxides Substrates Thin Films Fabrication Time Dependence Electrical Resistivity Silicon Mis Semiconductors Carrier Mobility Energy Conversion Efficiency Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
