NDLI: Temperature Dependence of Thermal Conductivity for Silicon Dioxide

Content Provider	The American Society of Mechanical Engineers (ASME) Digital Collection
Author	Yao, Da-Jeng Lai, Wei-Chih Chien, Heng-Chieh
Copyright Year	2008
Abstract	Heat transport of dielectric thin films in 30–300 nm thick is characterized in the temperature range of 74–300 K using the 3ω method, which is a simple method to measure the cross-plane thermal conductivity of dielectric thin films. Dielectric film samples of two kinds, deposited on Si substrates using plasma enhanced chemical vapor deposition (PECVD) and grown by thermal oxidation, were measured. In order to broaden the application of 3ω method, 3ω method system was combined with cryogenics system to measure temperature dependent material property. SiO2 films, prepared by thermal oxidation and PECVD, have been put and measured in the cryogenics system. The apparent thermal conductivity, intrinsic thermal conductivity, and interface resistance have been analyzed in different temperature. For this experiment, we discovered the thermal conductivity of PECVD SiO2 films is smaller than the thermal conductivity of SiO2 grown by thermal oxidation, because the porosity of thermal SiO2 is smaller than PECVD SiO2. The apparent thermal conductivity of SiO2 film decreases with film thickness. The thickness dependent thermal conductivity is interpreted in terms of a small interface thermal resistance RI. For SiO2 films, the thermal conductivity decreases if the temperature decreases, because the mean free path of heater carriers increases.
Sponsorship	Nanotechnology Institute
Starting Page	435
Ending Page	439
Page Count	5
File Format	PDF
ISBN	0791842924
DOI	10.1115/MNHT2008-52052
e-ISBN	0791838137
Volume Number	ASME 2008 First International Conference on Micro/Nanoscale Heat Transfer, Parts A and B
Conference Proceedings	ASME 2008 First International Conference on Micro/Nanoscale Heat Transfer
Language	English
Publisher Date	2008-06-06
Publisher Place	Tainan, Taiwan
Access Restriction	Subscribed
Subject Keyword	Thermal conductivity Interface resistance Temperature dependence Temperature effects Silicon
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Thermal Conductivity of Thin Silicon Dioxide Films in Integrated Circuits

Temperature Dependence Of Conductivity Of Silicon-Silicon Dioxide Interface

Thermal conduction path analysis in 3-D ICs

DC thermal numerical simulation of DG MOSFET

Experimental study on quasi-ballistic transport in silicon nanowire transistors and the impact of self-heating effects

Uncooled all-parylene bolometer

Impact of self-heating effects on the design of SOI devices versus temperature

Interfacial thermal resistance and temperature dependence of three adhesives for electronic packaging

Temperature dependence of thermal resistance at the water/silicon interface

Temperature Dependence of Thermal Conductivity for Silicon Dioxide

Similar Documents

Thermal Conductivity of Thin Silicon Dioxide Films in Integrated Circuits

Temperature Dependence Of Conductivity Of Silicon-Silicon Dioxide Interface

Thermal conduction path analysis in 3-D ICs

DC thermal numerical simulation of DG MOSFET

Experimental study on quasi-ballistic transport in silicon nanowire transistors and the impact of self-heating effects

Uncooled all-parylene bolometer

Impact of self-heating effects on the design of SOI devices versus temperature

Interfacial thermal resistance and temperature dependence of three adhesives for electronic packaging

Temperature dependence of thermal resistance at the water/silicon interface

Temperature Dependence of Thermal Conductivity for Silicon Dioxide