NDLI: Thermoelectric Characterization of Ge2Sb2Te5 Films for Phase-Change Memory

Content Provider	The American Society of Mechanical Engineers (ASME) Digital Collection
Author	Lee, Jaeho Kodama, Takashi Won, Yoonjin Asheghi, Mehdi Kenneth, E. Goodson
Copyright Year	2012
Abstract	While thermoelectric effects can strongly influence the performance of phase-change memory (PCM), the thermoelectric properties of phase-change materials for thin film structure have received little attention. This work reports the temperature and phase dependent Seebeck coefficient of 25 nm and 125 nm thick Ge2Sb2Te5 (GST) films. The Seebeck coefficient of crystalline GST films varies strongly with film thickness, due to changes in crystallization effect and grain boundary scattering. Electrothermal simulations demonstrate that the measured thermoelectric properties can strongly influence the temperature distribution and figures of merit for PCM devices. These data will facilitate cell optimization of novel phase-change memories.
Sponsorship	Nanotechnology Institute
Starting Page	687
Ending Page	693
Page Count	7
File Format	PDF
ISBN	9780791854778
DOI	10.1115/MNHMT2012-75092
Conference Proceedings	ASME 2012 Third International Conference on Micro/Nanoscale Heat and Mass Transfer
Language	English
Publisher Date	2012-03-03
Publisher Place	Atlanta, Georgia, USA
Access Restriction	Subscribed
Subject Keyword	Grain boundaries Radiation scattering Temperature distribution Temperature Scattering (physics) Crystallization Film thickness Optimization Thermoelectricity Phase change materials Thin films Simulation Electromagnetic scattering Engineering simulation
Content Type	Text
Resource Type	Article

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