NDLI: Chip-on-Beam and Hydrostatic Calibration of the Piezoresistive Coefficients on (111) Silicon

Content Provider	The American Society of Mechanical Engineers (ASME) Digital Collection
Author	Cho, Chun-Hyung Richard, C. Jaeger Jeffrey, C. Suhling Rahim, M. Kaysar
Copyright Year	2007
Abstract	Stress sensing test chips are used to investigate die stresses arising from assembly and packaging operations. The chips incorporate resistor or transistor sensing elements that are able to measure stresses via the observation of the changes in their resistivity/mobility. The piezoresistive behavior of such sensors is characterized by three piezoresistive (pi) coefficients, which are electro-mechanical material constants. Stress sensors fabricated on the surface of the (111) silicon wafers offer the advantage of being able to measure the complete stress state compared to such sensors fabricated on the (100) silicon. However, complete calibration of the three independent piezoresistive coefficients is more difficult and one approach utilizes hydrostatic measurement of the silicon “pressure” coefficients. We are interested in stress measurements over a very broad range of temperatures, and this paper present the experimental methods and results for hydrostatic measurements of the pressure coefficient of both n- and p-type silicon over a wide range of temperatures and then uses the results to provide a complete set of temperature dependent piezoresisitive coefficients for the (111) silicon.
Sponsorship	Electronic and Photonic Packaging Division
Starting Page	297
Ending Page	307
Page Count	11
File Format	PDF
ISBN	0791842770
DOI	10.1115/IPACK2007-33570
e-ISBN	0791838013
Volume Number	ASME 2007 InterPACK Conference, Volume 1
Conference Proceedings	ASME 2007 InterPACK Conference collocated with the ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference
Language	English
Publisher Date	2007-07-08
Publisher Place	Vancouver, British Columbia, Canada
Access Restriction	Subscribed
Subject Keyword	Resistors Mechanical admittance Temperature Semiconductor wafers Calibration Pressure Stress Experimental methods Hydrostatics Electrical resistivity Packaging Silicon Sensors Manufacturing Transistors
Content Type	Text
Resource Type	Article

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