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| Content Provider | The American Society of Mechanical Engineers (ASME) Digital Collection |
|---|---|
| Author | Higurashi, Eiji Nakagawa, Masao Suga, Tadatomo Sawada, Renshi |
| Copyright Year | 2005 |
| Abstract | This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing the surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air with applied static pressure. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883. |
| Sponsorship | Heat Transfer Division and Electronic and Photonic Packaging Division |
| Starting Page | 793 |
| Ending Page | 796 |
| Page Count | 4 |
| File Format | |
| ISBN | 0791842002 |
| DOI | 10.1115/IPACK2005-73436 |
| e-ISBN | 0791837629 |
| Volume Number | Advances in Electronic Packaging, Parts A, B, and C |
| Conference Proceedings | ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference |
| Language | English |
| Publisher Date | 2005-07-17 |
| Publisher Place | San Francisco, California, USA |
| Access Restriction | Subscribed |
| Subject Keyword | Surface activated bonding Flip-chip bonding Hybrid integration Bonding Lasers Flip-chip |
| Content Type | Text |
| Resource Type | Article |
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