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| Content Provider | The American Society of Mechanical Engineers (ASME) Digital Collection |
|---|---|
| Author | Hatakeyama, Tomoyuki Fushinobu, Kazuyoshi Okazaki, Ken |
| Copyright Year | 2005 |
| Abstract | Numerical calculation of submicron silicon MOSFET and CMOS device is performed. In order to have a higher degree of integration, the distance between two MOSFETs in CMOS structure can be decreased. But decreasing the distance between two MOSFETs results in an electrical interaction. In this research, by comparing the calculation result of n-type and p-type MOSFET and that of CMOS, we examine the interaction mechanism between n-type and p-type MOSFET in CMOS device when the distance between n-type and p-type MOSFET is decreased. From the calculated results, we investigate that the reason of the interaction between two MOSFET in CMOS is the forward bias at the p-n junction of substrate. Furthermore, we can estimate the distance, at the case of interaction, from the results of n-type and p-type MOSFET separately model, not from the results of CMOS model. |
| Sponsorship | Heat Transfer Division and Electronic and Photonic Packaging Division |
| Starting Page | 2073 |
| Ending Page | 2078 |
| Page Count | 6 |
| File Format | |
| ISBN | 0791842002 |
| DOI | 10.1115/IPACK2005-73151 |
| e-ISBN | 0791837629 |
| Volume Number | Advances in Electronic Packaging, Parts A, B, and C |
| Conference Proceedings | ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference |
| Language | English |
| Publisher Date | 2005-07-17 |
| Publisher Place | San Francisco, California, USA |
| Access Restriction | Subscribed |
| Subject Keyword | Mosfet transistors Silicon Junctions Complementary metal oxide semiconductors |
| Content Type | Text |
| Resource Type | Article |
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