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| Content Provider | ACM Digital Library |
|---|---|
| Author | Canal, Ramon Aymerich, Nivard González, Antonio Ganapathy, Shrikanth Rubio, Antonio |
| Abstract | Memory circuits are playing a key role in complex multicore systems with both data and instructions storage and mailbox communication functions. There is a general concern that conventional SRAM cell based on the 6T structure could exhibit serious limitations in future CMOS technologies due to the instability caused by transistor mismatching as well as for leakage consumption reasons. For L1 data caches the new cell 3T1D DRAM is considered a potential candidate to substitute 6T SRAMs. We first evaluate the impact of the positive bias temperature instability, PBTI, on the access and retention time of the 3T1D memory cell implemented with 45 nm technology. Then, we consider all sources of variations and the effect of the degradation caused by the aging of the device on the yield at system level. |
| Starting Page | 277 |
| Ending Page | 282 |
| Page Count | 6 |
| File Format | |
| ISBN | 9781450306676 |
| DOI | 10.1145/1973009.1973065 |
| Language | English |
| Publisher | Association for Computing Machinery (ACM) |
| Publisher Date | 2011-05-02 |
| Publisher Place | New York |
| Access Restriction | Subscribed |
| Subject Keyword | Pbti 6t-sram 3t1d-dram Device degradation |
| Content Type | Text |
| Resource Type | Article |
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