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| Content Provider | ACM Digital Library |
|---|---|
| Author | Li, Yiming Yeh, Ta-Ching Hwang, Chih-Hong Li, Tien-Yeh |
| Abstract | Modeling of device variability is crucial for the accuracy of timing in circuits and systems, and the stability of high-frequency application. Unfortunately, due to the randomness of dopant position in device, the fluctuation of device gate capacitance is nonlinear and hard to be modeled in current compact models. Therefore, a large-scale statistically sound "atomistic" device/circuit coupled simulation approach is proposed to characterize the random-dopant-induced characteristic fluctuations in 16-nm-gate CMOS integrated circuits concurrently capturing the discrete-dopant-number- and discrete-dopant-position-induced fluctuations. The variations of transition time of digital circuit (inverter, NAND, and NOR gates) and high-frequency characteristic of common-source amplifier are estimated. For the digital circuits, the function-dependent and circuit-topology-dependent characteristic fluctuations resulted from random nature of discrete dopants is for the first time discussed. This study provides an insight into random-dopant- induced intrinsic timing and high-frequency characteristic fluctuations. The accuracy of the simulation technique is confirmed by the use of experimentally calibrated transistor physical model. |
| Starting Page | 278 |
| Ending Page | 285 |
| Page Count | 8 |
| File Format | |
| ISBN | 9781424428205 |
| ISSN | 10923152 |
| Language | English |
| Publisher | Association for Computing Machinery (ACM) |
| Publisher Date | 2008-11-10 |
| Access Restriction | Subscribed |
| Subject Keyword | Device variability Fluctuation High frequency circuit Digital circuit Random dopant Timing |
| Content Type | Text |
| Resource Type | Article |
| Subject | Computer Graphics and Computer-Aided Design Software Computer Science Applications |
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