NDLI: Evolution of the Raman spectrum of graphene grown on copper upon oxidation of the substrate

Content Provider	Springer Nature Link
Author	Yin, Xiuli Li, Yilei Ke, Fen Lin, Chenfang Zhao, Huabo Gan, Lin Luo, Zhengtang Zhao, Ruguang Heinz, Tony F. Hu, Zonghai
Copyright Year	2014
Abstract	Significant changes in the Raman spectrum of single-layer graphene grown on a copper film were observed after the spontaneous oxidation of the underlying substrate that occurred under ambient conditions. The frequencies of the graphene G and 2D Raman modes were found to undergo red shifts, while the intensities of the two bands change by more than an order of magnitude. To understand the origin of these effects, we further characterized the samples by scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and atomic force microscopy (AFM). The oxidation of the substrate produced an appreciable corrugation in the substrate without disrupting the crystalline order of the graphene overlayer and/or changing the carrier doping level. We explain the red shifts of the Raman frequencies in terms of tensile strain induced by corrugation of the graphene layer. The changes in Raman intensity with oxidation arise from the influence of the thin cuprous oxide film on the efficiency of light coupling with the graphene layer in the Raman scattering process.
Starting Page	1613
Ending Page	1622
Page Count	10
File Format	PDF
ISSN	19980124
Journal	Nano Research
Volume Number	7
Issue Number	11
e-ISSN	19980000
Language	English
Publisher	Tsinghua University Press
Publisher Date	2014-09-04
Publisher Place	Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Raman spectroscopy light coupling tensile strain graphene STM STS AFM Nanotechnology Materials Science Atomic/Molecular Structure and Spectra Condensed Matter Physics Biotechnology Biomedicine general
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

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