NDLI: Formation of a donor profile in silicon upon simultaneous implantation of phosphorus and sodium ions

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Structure-phase transformation in surface layers of hard alloy as a result of action of high-current electron beams

Formation of a donor profile in silicon upon simultaneous implantation of phosphorus and sodium ions

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Formation of a donor profile in silicon upon simultaneous implantation of phosphorus and sodium ions

Content Provider	Springer Nature Link
Author	Korol’, V. M. Astakhov, V. P. Vedenyapin, S. A. Zastavi, A. V.
Copyright Year	2011
Abstract	A four-point probe method was used to study, as the layers were removed consecutively, the concentration distribution profiles of free electrons in high-resistivity p-Si with implanted P$^{+}$ and Na$^{+}$ ions. Anodic oxidation was used to remove layers at a depth of less than 1 μm, and polishing at larger depths. It was shown that the efficiency of diffusion doping of silicon with sodium is determined, to a large extent, by the ratio between the energies of P$^{+}$ and Na$^{+}$ ions. If the conditions are optimal, the efficiency of doping by simultaneous implantation of sodium and phosphorus ions is better (by a factor of 2.5 on the average) than that of doping with Na$^{+}$ ions only.
Starting Page	358
Ending Page	361
Page Count	4
File Format	PDF
ISSN	10274510
Journal	Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
Volume Number	5
Issue Number	2
e-ISSN	18197094
Language	English
Publisher	SP MAIK Nauka/Interperiodica
Publisher Date	2011-04-26
Publisher Place	Dordrecht
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Surfaces and Interfaces, Thin Films
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Surfaces, Coatings and Films

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