NDLI: Improvements of the SiC homoepitaxy process in a horizontal cold-wall CVD reactor

Content Provider	Springer Nature Link
Author	Wischmeyer, F. Niemann, E. Hartnagel, H. L.
Copyright Year	1999
Abstract	In this research effort, we investigate the influence of the cold-wall reactor geometry on the chemical vapor deposition (CVD) growth process of 4H-SiC and the quality of lightly doped epitaxial layers. Stable growth conditions with respect to growth rate and C/Si ratio of the gas-phase can be achieved by the appropriate choice of the distance between susceptor and walls of the inner quartz tube. A background doping concentration in the range of 10$^{14}$ cm$^{−3}$ is realized by employing a high temperature stable and hydrogen etch resistant coating of the graphite susceptor. Doping and thickness homogeneity of epitaxial layers on 35 mm diam. 4H-SiC substrates, expressed by σ/mean, are as low as 6.9 and 7.7%, respectively. From deep level transient spectroscopy measurements, the concentration of the frequently reported intrinsic Z$_{1}$-center in 4H-SiC is determined to be below the detection limit of 10$^{12}$ cm$^{−3}$.
Starting Page	175
Ending Page	179
Page Count	5
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	28
Issue Number	3
e-ISSN	1543186X
Language	English
Publisher	Springer-Verlag
Publisher Date	1999-01-01
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Chemical vapor deposition (CVD) deep level transient spectroscopy (DLTS) doping homogeneity horizontal reactor purity SiC Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics and Spectroscopy
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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