NDLI: Wet thermal oxidation of GaN

Content Provider	Springer Nature Link
Author	Readinger, E. D. Wolter, S. D. Waltemyer, D. L. Delucca, J. M. Mohney, S. E. Prenitzer, B. I. Giannuzzi, L. A. Molnar, R. J.
Copyright Year	1999
Abstract	Thermal oxidation of GaN was conducted at 700–900°C with O$_{2}$, N$_{2}$, and Ar as carrier gases for 525–630 Torr of H$_{2}$O vapor. Upon oxidation of both GaN powders and n-GaN epilayers, the monoclinic β-Ga$_{2}$O$_{3}$ phase was identified using glancing angle x-ray diffraction. The chemical composition of the oxide was verified using x-ray photoelectron spectroscopy. In experiments conducted using GaN powder, the oxide grew most rapidly when O$_{2}$ was the carrier gas for H$_{2}$O. The same result was obtained on n-type GaN epilayers. Furthermore, the thickness of the oxide grown in H$_{2}$O with O$_{2}$ as the carrier gas was found to be proportional to the oxidation time at all temperatures studied, and an activation energy of 210±10 kJ/mol was obtained. Scanning electron microscopy revealed a smoother surface after wet oxidation than was reported previously for dry oxidation. However, cross-sectional transmission electron microscopy revealed that the wet oxide/GaN interface was irregular and non-ideal for devicefabrication, even more so than the dry oxide/GaN interface. This observation was consistent with poor electrical properties.
Starting Page	257
Ending Page	260
Page Count	4
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	28
Issue Number	3
e-ISSN	1543186X
Language	English
Publisher	Springer-Verlag
Publisher Date	1999-01-01
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	GaN thermal oxidation Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics and Spectroscopy
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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