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  1. Journal of Electronic Materials
  2. Journal of Electronic Materials : Volume 28
  3. Journal of Electronic Materials : Volume 28, Issue 3, March 1999
  4. Foreword
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Journal of Electronic Materials : Volume 46
Journal of Electronic Materials : Volume 45
Journal of Electronic Materials : Volume 44
Journal of Electronic Materials : Volume 43
Journal of Electronic Materials : Volume 42
Journal of Electronic Materials : Volume 41
Journal of Electronic Materials : Volume 40
Journal of Electronic Materials : Volume 39
Journal of Electronic Materials : Volume 38
Journal of Electronic Materials : Volume 37
Journal of Electronic Materials : Volume 36
Journal of Electronic Materials : Volume 35
Journal of Electronic Materials : Volume 34
Journal of Electronic Materials : Volume 33
Journal of Electronic Materials : Volume 32
Journal of Electronic Materials : Volume 31
Journal of Electronic Materials : Volume 30
Journal of Electronic Materials : Volume 29
Journal of Electronic Materials : Volume 28
Journal of Electronic Materials : Volume 28, Issue 12, December 1999
Journal of Electronic Materials : Volume 28, Issue 11, November 1999
Journal of Electronic Materials : Volume 28, Issue 10, October 1999
Journal of Electronic Materials : Volume 28, Issue 9, September 1999
Journal of Electronic Materials : Volume 28, Issue 8, August 1999
Journal of Electronic Materials : Volume 28, Issue 7, July 1999
Journal of Electronic Materials : Volume 28, Issue 6, June 1999
Journal of Electronic Materials : Volume 28, Issue 5, May 1999
Journal of Electronic Materials : Volume 28, Issue 4, April 1999
Journal of Electronic Materials : Volume 28, Issue 3, March 1999
Foreword
Pt and W ohmic contacts to p-6H-SiC by focused ion beam direct-write deposition
Temperature measurement in a silicon carbide light emitting diode by raman scattering
Generation and annealing characteristics of paramagnetic centers in oxidized 3C-SiC and 6H-SiC
Circular and linear enhancement-mode 6H-SiC MOSFETs for high temperature applications
Experimental characterization and numerical simulation of the electrical properties of nitrogen, aluminum, and boron in 4H/6H-SiC
Re-oxidation characteristics of oxynitrides on 3C- and 4H-SiC
Characterization of phosphorus implantation in 4H-SiC
Improvements of the SiC homoepitaxy process in a horizontal cold-wall CVD reactor
Electron microscopic study on residual defects of Al$^{+}$ or B$^{+}$ implanted 4H-SiC
Correlation of the electrical properties with interface crystallography in the Ti/3C-SiC system
Shallow acceptor levels in 4H- and 6H-SiC
Plasma chemistries for high density plasma etching of SiC
Hydrogen sensing characteristics of Pd-SiC schottky diode operating at high temperature
Mechanisms of homo- and heteroepitaxial growth of SiC on α-SiC(0001) by solid-source molecular beam epitaxy
Surface roughening in ion implanted 4H-silicon carbide
Chemical contribution of oxygen to silicon carbide plasma etching kinetics in a distributed electron cyclotron resonance (DECR) reactor
Structural and electrical characterization of AIN thin films obtained by nitridation of Al/Si substrate
Electrical characteristics and thermal stability of W, WSiN, and Nb contacts to p- and n-type GaN
Interfacial effects during GaN growth on 6H-SiC
Visible-blindness in photoconductive and photovoltaic AlGaN ultraviolet detectors
Photoluminescence characteristics and pit formation of InGaN/GaN quantum-well structures grown on sapphire substrates by low-pressure metalorganic vapor phase epitaxy
Magnetic resonance studies of InGaN-based quantum well diodes
Wet thermal oxidation of GaN
Redistribution of implanted dopants in GaN
Annealing studies of photoluminescence spectra from multiple Er$^{3+}$ centers in er-implanted GaN
Pulsed laser deposition and processing of wide band gap semiconductors and related materials
Room-temperature continuous-wave operation of GaN-based laser diodes grown by raised-pressure metalorganic chemical vapor deposition
UV-photoassisted etching of GaN in KOH
Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride
The impact of nitridation and nucleation layer process conditions on morphology and electron transport in GaN epitaxial films
Electronic near-surface defect states of bare and metal covered n-GaN films observed by cathodoluminescence spectroscopy
Plasma etch-induced conduction changes in gallium nitride
Activation of silicon ion-implanted gallium nitride by furnace annealing
Very high-speed ultraviolet photodetectors fabricated on GaN
Donor ion-implantation doping into SiC
Effects of annealing in an oxygen ambient on electrical properties of ohmic contacts to p-type GaN
Journal of Electronic Materials : Volume 28, Issue 2, February 1999
Journal of Electronic Materials : Volume 28, Issue 1, January 1999
Journal of Electronic Materials : Volume 27
Journal of Electronic Materials : Volume 26

Foreword

Content Provider Springer Nature Link
Author Adesida, Ilesanmi Capa, Michal A. Melloch, Michael R. Nakamura, Shuji
Copyright Year 1999
Starting Page 135
Ending Page 135
Page Count 1
File Format PDF
ISSN 03615235
Journal Journal of Electronic Materials
Volume Number 28
Issue Number 3
e-ISSN 1543186X
Language English
Publisher Springer-Verlag
Publisher Date 1999-01-01
Publisher Place New York
Access Restriction One Nation One Subscription (ONOS)
Subject Keyword Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics and Spectroscopy
Content Type Text
Subject Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering
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