NDLI: Defects in HgTe and CdHgTe Grown by Molecular Beam Epitaxy

Content Provider	Springer Nature Link
Author	Selvig, E. Tonheim, C.R. Lorentzen, T. Kongshaug, K.O. Skauli, T. Haakenaasen, R.
Copyright Year	2008
Abstract	The defect morphology in HgTe and CdHgTe was studied in (211)B-oriented layers grown in a 20°C temperature range around the optimal growth temperature. The density of defects varies strongly with the growth temperature. In HgTe, the shape of the microvoid defects is very sensitive to the growth temperature and can be used to determine the deviation from the optimal growth temperature. Using thermodynamical modeling, the optimal growth temperature for CdHgTe can then be calculated. We describe a mechanism for the formation of microvoids and needles which involves preferential surface diffusion of Te combined with an impurity or defect on the substrate. Microvoids on (111)B-oriented partially twinned HgTe layers were also studied. The microvoids in the twinned parts of the layer were found to be rotated 180 deg relative to the untwinned parts of the layer.
Starting Page	1444
Ending Page	1452
Page Count	9
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	37
Issue Number	9
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2008-04-09
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	CdHgTe HgCdTe HgTe molecular beam epitaxy defects voids microvoids needles photoluminescence X-ray diffraction Solid State Physics and Spectroscopy Electronics and Microelectronics, Instrumentation Characterization and Evaluation of Materials Optical and Electronic Materials
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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