NDLI: Nonequilibrium Operation of Arsenic Diffused Long-Wavelength Infrared HgCdTe Photodiodes

Content Provider	Springer Nature Link
Author	Wijewarnasuriya, Priyalal S. Emelie, P.Y. D’Souza, Arvind Brill, Gregory Stapelbroek, Maryn G. Velicu, Silviu Chen, Yuanping Grein, Chris Sivananthan, Sivalingam Dhar, Nibir K.
Copyright Year	2008
Abstract	We demonstrated a device with a unique planar architecture using a novel approach for obtaining low arsenic doping concentrations in long-wavelength (LW) HgCdTe on CdZnTe substrates. HgCdTe materials were grown by molecular beam epitaxy (MBE). We fabricated a p-on-n structure that we term P $^{+}$/π/N $^{+}$ where the symbol “π” is to indicate a drastically reduced extrinsic p-type carrier concentration (on the order of mid 10$^{15}$ cm$^{−3}$); P $^{+}$ and N $^{+}$ denote a higher doping density, as well as a higher energy gap, than the photosensitive base π-region. Fabricated devices indicated that Auger suppression is seen in the P $^{+}$/π/N $^{+}$ architecture at temperatures above 130 K and we obtained a saturation current on the order of 3 mA on 250-μm-diameter devices at 300 K with Auger suppression. Data shows that about a 50% reduction in dark current is achieved at 300 K due to Auger suppression. The onset of Auger suppression voltage is 450 mV at 300 K and 100 mV at 130 K. Results indicate that a reduction of the series resistance could reduce this further. A principal challenge was to obtain low p-type doping levels in the π-region. This issue was overcome using a novel deep diffusion process, thereby demonstrating successfully low-doped p-type HgCdTe in MBE-grown material. Near-classical spectral responses were obtained at 250 K and at 100 K with cut-off wavelengths of 7.4 μm and 10.4 μm, respectively. At 100 K, the measured non-antireflection-coated quantum efficiency was 0.57 at 0.1 V under backside illumination.
Starting Page	1283
Ending Page	1290
Page Count	8
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	37
Issue Number	9
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2008-04-23
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Auger suppression nonequilibrium photovoltaic devices arsenic p-type doping molecular beam epitaxy HgCdTe long wavelength Solid State Physics and Spectroscopy Electronics and Microelectronics, Instrumentation Characterization and Evaluation of Materials Optical and Electronic Materials
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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