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| Content Provider | Springer Nature Link |
|---|---|
| Author | Aguilar Gama, M. Tulio Ramírez Morales, Erik Montiel González, Z. Mendoza Galván, A. Sotelo Lerma, Mérida Nair, P. K. Hu, Hailin |
| Copyright Year | 2014 |
| Abstract | Aluminum oxide (Al$_{2}$O$_{3}$) is a good dielectric material for optoelectronic applications. With technologies such as atomic layer deposition (ALD), homogeneous ultrathin films of Al$_{2}$O$_{3}$ can be obtained at moderate temperatures. In this work, Al$_{2}$O$_{3}$ thin films of thickness up to 310 nm were obtained by ALD at 150 and 175 °C with trimethylaluminum and H$_{2}$O as precursors. The nitrogen purging pulses were kept short (1 or 2 s) to reach the growth rate of about 0.14 nm/cycle at 150 °C and 0.15 nm/cycle at 175 °C after 800 deposition cycles. The obtained films were amorphous and showed a good homogeneity over a 2 × 2 cm$^{2}$ area confirmed by optical reflectance. X-ray photoelectron spectroscopy analysis on the surface of the ALD samples indicate that films deposited at 150 °C contained more carbon-related bonds, which probably arise from incomplete surface reaction or insufficient N$_{2}$ purging time. Results of spectroscopic ellipsometry (SE) reveal that the refractive indices (n) of the ALD films are systematically lower than that of crystalline α-Al$_{2}$O$_{3}$ in the wavelength range, 240–850 nm. Higher deposition temperature increased slightly the n values, but at the same time it also increased the roughness of the film surface. A good match between the film thicknesses estimated by SE and from the cross-sectional scanning electron microscopy images of the same group of samples confirms the effectiveness of the SE modeling to study the homogeneity of the alumina films deposited by ALD on silicon substrates. |
| Starting Page | 5546 |
| Ending Page | 5552 |
| Page Count | 7 |
| File Format | |
| ISSN | 09574522 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Volume Number | 26 |
| Issue Number | 8 |
| e-ISSN | 1573482X |
| Language | English |
| Publisher | Springer US |
| Publisher Date | 2014-06-27 |
| Publisher Place | New York |
| Access Restriction | One Nation One Subscription (ONOS) |
| Subject Keyword | Optical and Electronic Materials Characterization and Evaluation of Materials |
| Content Type | Text |
| Resource Type | Article |
| Subject | Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering |
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