NDLI: Electromigration statistics and damage evolution for Pb-free solder joints with Cu and Ni UBM in plastic flip-chip packages

Content Provider	Springer Nature Link
Author	Chae, Seung Hyun Zhang, Xuefeng Lu, Kuan Hsun Chao, Huang Lin Ho, Paul S. Ding, Min Su, Peng Uehling, Trent Ramanathan, Lakshmi N.
Copyright Year	2006
Abstract	A series of electromigration (EM) tests were performed as a function of temperature and current density to investigate lifetime statistics and damage evolution for Pb-free solder joints with Cu and Ni under-bump-metallizations (UBMs). The EM lifetime was found to depend on the failure criterion used, so the results were compared based on the first resistance jump and conventional open-failure criterion. Solder joints with Cu UBM had a longer lifetime than Ni UBM based on the open-failure criterion, but the lifetime with Ni UBM became comparable when the first resistance jump criterion was applied. To determine the temperature in solder joints, the Joule heating effect was investigated with experiments and finite element analysis. The temperature of solder joints was determined to be approximately 15°C higher than that at the Si die surface when 1 A of current was applied. With the appropriate temperature correction, the activation energies and the current density exponents were found to be Q = 1.11 eV, n = 3.75 and Q = 0.86 eV, n = 2.1 based on the open-failure criterion for solder joints with Cu and Ni UBM, respectively. Based on the first resistance jump criterion, Q = 1.05 eV, n = 1.45 for Cu UBM and Q = 0.94 eV, n = 2.2 for Ni UBM, respectively. For solder joints with Cu UBM, voids were formed initially at the Cu$_{6}$Sn$_{5}$/solder interface while the final open failure occurred at the Cu$_{3}$Sn/Cu$_{6}$Sn$_{5}$ interface. For Ni UBM, voids were formed initially at the Ni$_{3}$Sn$_{4}$/solder interface leading to failure at the same interface. The formation of intermetallic compounds (IMCs) was enhanced under current stressing, which followed linear growth kinetics with time. The IMC growth was accompanied by volume shrinkage, which accelerated damage evolution under EM.
Starting Page	247
Ending Page	258
Page Count	12
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	18
Issue Number	1-3
e-ISSN	1573482X
Language	English
Publisher	Kluwer Academic Publishers-Plenum Publishers
Publisher Date	2006-09-22
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Characterization and Evaluation Materials Optical and Electronic Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

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