NDLI: Structure and electrical properties of (100)-oriented BiSc$_{1/2}$Fe$_{1/2}$O$_{3}$–PbTiO$_{3}$ thin films with different thickness via sol

Content Provider	Springer Nature Link
Author	Zhong, Caifu Lu, Zhenya Wang, Xiaohui Li, Longtu
Copyright Year	2015
Abstract	Structure and electric properties of the sol–gel derived 0.45BiSc$_{1/2}$Fe$_{1/2}$O$_{3}$–0.55PbTiO$_{3}$ (BFS–PT) thin films deposited on Pt(111)/Ti/SiO$_{2}$/Si(100) substrates with LaNiO$_{3}$ buffer layers are investigated. Highly (100)-oriented BFS–PT thin films with thickness ranging from 200 to 600 nm were synthesized by introducing LaNiO$_{3}$ buffer layers. The as-deposited BFS–PT films showed enhanced dielectric and piezoelectric properties, the dielectric constant and effective piezoelectric coefficient $$d_{33}^{*}$$ was approximate 1820 and 110 pm/V respectively for film of 600 nm, which was comparable to that of BiScO$_{3}$–PbTiO$_{3}$ or PZT thin films. The thickness dependence of the dielectric, ferroelectric and piezoelectric properties was discussed. Besides, the direct current conduction mechanism of the films was investigated as well, indicating that bulk limited Poole–Frenkel emission was observed to dominate the leakage current in the high electric field.
Starting Page	7146
Ending Page	7152
Page Count	7
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	26
Issue Number	9
e-ISSN	1573482X
Language	English
Publisher	Springer US
Publisher Date	2015-06-20
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Optical and Electronic Materials Characterization and Evaluation of Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

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