NDLI: Preparation of Er$_{2}$O$_{3}$ thin films by sol-gel dipping process

Content Provider	Springer Nature Link
Author	Chengyun, Wang Liwen, Gong Guiwen, Zhao
Copyright Year	2002
Abstract	Er$_{2}$O$_{3}$ thin films had been prepared by a sol-gel dipping process with Er(NO$_{3}$)$_{3}$ · 6H$_{2}$O as the precursor and collodion as the viscosity-increasing agent. The annealing temperature of gel films was 600 °C and the thickness of Er$_{2}$O$_{3}$ thin films increased linearly with the number of dippings at a rate of about 40 nm per dipping. This sol-gel dipping process provided a good reproducibility of the homogeneous Er$_{2}$O$_{3}$ thin films. The spectral and crystal properties of the thin films were studied in detail and the results indicated that the color of the thin films mainly resulted from an interference effect. Moreover, the optically transparent region of Er$_{2}$O$_{3}$ thin films was determined with photoacoustic spectroscopy.
Starting Page	179
Ending Page	182
Page Count	4
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	13
Issue Number	3
e-ISSN	1573482X
Language	English
Publisher	Kluwer Academic Publishers
Publisher Date	2002-01-01
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Optical and Electronic Materials Characterization and Evaluation Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

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