NDLI: Effect of growth temperature on structural, electrical and optical properties of dual ion beam sputtered ZnO thin films

Content Provider	Springer Nature Link
Author	Pandey, Sushil Kumar Pandey, Saurabh Kumar Mukherjee, C. Mishra, P. Gupta, M. Barman, S. R. D’Souza, S. W. Mukherjee, Shaibal
Copyright Year	2013
Abstract	ZnO epitaxial thin films were grown on p-type Si(100) substrates by dual ion beam sputtering deposition system. The crystalline quality, surface morphology, optical and electrical properties of as-deposited ZnO thin films at different growth temperatures were studied. Substrate temperature was varied from 100 to 600 °C at constant oxygen percentage O$_{2}$/(O$_{2}$ + Ar) % of 66.67 % in a mixed gas of Ar and O$_{2}$ with constant chamber pressure of 2.75 × 10$^{−4}$ mBar. X-Ray diffraction analyses revealed that all the films had (002) preferred orientation. The minimum value of stress was reported to be −0.32 × 10$^{10}$ dyne/cm$^{2}$ from ZnO film grown at 200 °C. Photoluminescence measurements demonstrated sharp near-band-edge emission (NBE) was observed at ~375 nm along with deep level emission (DLE) in the visible spectral range at room temperature. The DLE Peak was found to have decrement as ZnO growth temperature was increased from 200 to 600 °C. The minimum FWHM of the NBE peak of 16.76 nm was achieved at 600 °C growth temperature. X-Ray photoelectron spectroscopy study revealed presence of oxygen interstitials and vacancies point defects in ZnO film grown at 400 °C. The ZnO thin film was found to be highly resistive when grown at 100 °C. The ZnO films were found to be n-type conducting with decreasing resistivity on increasing substrate temperature from 200 to 500 °C and again increased for film grown at 600 °C. Based on these studies a correlation between native point defects, optical and electrical properties has been established.
Starting Page	2541
Ending Page	2547
Page Count	7
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	24
Issue Number	7
e-ISSN	1573482X
Language	English
Publisher	Springer US
Publisher Date	2013-02-16
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Optical and Electronic Materials Characterization and Evaluation of Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

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