NDLI: Highly crystalline silicon carbide thin films grown at low substrate temperature by HWCVD technique

Content Provider	Springer Nature Link
Author	Jha, Himanshu S. Agarwal, Pratima
Copyright Year	2014
Abstract	Highly crystalline cubic Silicon carbide (3C-SiC) thin films were deposited on quartz and silicon substrate at low substrate temperature of 400 °C by hot wire chemical vapour deposition technique using Silane, methane and hydrogen gases. The influence of methane flow rate (MFR) on structural and electrical properties of films has been investigated. All the deposited films are highly crystalline with crystallite size as high as 27 nm for film deposited with MFR = 6 SCCM. A decrease in crystallite size is observed with increase in MFR. Electrical conductivity of films deposited at low MFR (6–12 SCCM) is ~1 Ω$^{−1}$ cm$^{−1}$, however an order of decrease in conductivity has been observed as MFR increases beyond 12 SCCM. Activation energy of films also decreases monotonically with increasing MFR. The variation in dark conductivity and activation energy could be attributed to the microstructural changes in films with increasing MFR. No trace of any contamination of filament material is observed in these films. These highly crystalline and conductive films find applications in various microelectronic and optoelectronic devices.
Starting Page	1381
Ending Page	1388
Page Count	8
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	26
Issue Number	3
e-ISSN	1573482X
Language	English
Publisher	Springer US
Publisher Date	2014-11-29
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Optical and Electronic Materials Characterization and Evaluation of Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

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