NDLI: Temperature dependence of ZnO thin films grown on Si substrate

Content Provider	Springer Nature Link
Author	Kim, Y. Y. Ahn, C. H. Kang, S. W. Kong, B. H. Mohanta, S. K. Cho, H. K. Lee, J. Y. Kim, H. S.
Copyright Year	2007
Abstract	The structural and optical properties of ZnO thin films grown on Si substrates were investigated for different growth temperatures in the range of 520–720 °C. X-ray diffraction investigations revealed the preferred c-axis oriented growth of ZnO thin films, which was further confirmed by the presence of ZnO (0002) diffraction spots with arc shape. The increase in growth temperature transformed surface morphology from pyramidal with columnar grains to relatively flat surface with increased grain size. In addition, the increased growth temperature caused redshift and intensity enhancement of band-edge emission of the ZnO, which were related to the increase in tensile strain and the grain size, respectively.
Starting Page	749
Ending Page	754
Page Count	6
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	19
Issue Number	8-9
e-ISSN	1573482X
Language	English
Publisher	Springer US
Publisher Date	2007-10-02
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Characterization and Evaluation of Materials Optical and Electronic Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

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