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| Content Provider | Springer Nature Link |
|---|---|
| Author | Xia, Ming Gu, Mu Liu, Xiaolin Liu, Bo Huang, Shiming Ni, Chen |
| Copyright Year | 2015 |
| Abstract | Zn$^{2+}$ doped CuI thin films were prepared by vacuum evaporation technique. The influence of the dopant on crystalline, electrical and luminescence properties of the CuI thin films were investigated. An enhancement in crystallization and the shift of (111) peak were found in the Zn$^{2+}$ doped CuI films. The native p-type semiconductor of CuI film changed to n-type one for doping concentration up to 2 mol%. Such change is due to the mechanism that the Zn$^{2+}$ ions not only fill the Cu vacancies but also donate free electrons. For the n-type CuI films, the minimal resistivity and maximal electron concentration was found for the 4 mol% Zn$^{2+}$ doped sample. All Zn$^{2+}$ doped CuI thin films showed the 410 and 422 nm near-band emissions. The intensity of the 422 nm emission was significantly improved with 1 mol% Zn$^{2+}$ doping. The observation can be explained by the increase of the donor–acceptor pairs in the film. |
| Starting Page | 2629 |
| Ending Page | 2633 |
| Page Count | 5 |
| File Format | |
| ISSN | 09574522 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Volume Number | 26 |
| Issue Number | 4 |
| e-ISSN | 1573482X |
| Language | English |
| Publisher | Springer US |
| Publisher Date | 2015-02-13 |
| Publisher Place | Boston |
| Access Restriction | One Nation One Subscription (ONOS) |
| Subject Keyword | Optical and Electronic Materials Characterization and Evaluation of Materials |
| Content Type | Text |
| Resource Type | Article |
| Subject | Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering |
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