NDLI: Electrical properties of In doped CdS thin films

Content Provider	Springer Nature Link
Author	Ramaiah, Kodigala Subba
Copyright Year	1999
Abstract	Indium doped polycrystalline cadmium sulphide 〈CdS:In〉 thin films have been prepared by the spray pyrolysis technique on glass substrates in an enclosed dome. The different scattering mechanisms such as lattice, impurity and grain boundary scattering for CdS:In films are observed at low temperature, in the range of 303 to 120 K. The experimentally determined mobilities due to these scatterings are well interpreted with those of theoretically calculated mobilities. The d.c. conductivity for CdS:In films has also been studied in the same temperature region. The Mott variable range hopping conduction process followed below the temperature of 150 K. The Mott parameters such as N(E $_{ F }$), R, W and α are found to be 1.26 × 10$^{19}$ eV$^{−1}$cm$^{−3}$, 9.8 × 10$^{−-7}$cm, 0.02 eV$^{−1}$ and 2.38 × 10$^{6}$cm$^{−1}$, respectively from the conductivity data.
Starting Page	291
Ending Page	294
Page Count	4
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	10
Issue Number	4
e-ISSN	1573482X
Language	English
Publisher	Kluwer Academic Publishers
Publisher Date	1999-01-01
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Optical and Electronic Materials Characterization and Evaluation Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

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