NDLI: Influence of interface contamination on transport properties of two-dimensional electron gas in selective area growth AlGaN/GaN heterostructure

Content Provider	Springer Nature Link
Author	Yang, Fan He, Liang Zheng, Yue Li, Liuan Chen, Zijun Zhou, Deqiu He, Zhiyuan Yao, Yao Ni, Yiqiang Shen, Zhen Zhang, Xiaorong He, Lei Wu, Zhisheng Zhang, Baijun Liu, Yang
Copyright Year	2016
Abstract	The selective area growth (SAG) technique has been proved to be an effective method to achieve trench gate normally-off AlGaN/GaN MOSFET. In this paper, the two-dimensional electron gas (2DEG) transport properties of SAG AlGaN/GaN heterostructure are investigated for samples with different insertion layers. As the thickness of the GaN insertion layer increases, the mobility of 2DEG drops at first and then increases dramatically. This is explained by a shift of the location of the 2DEG from the GaN template into the GaN insertion layer. Interface contamination at the template/insertion layer interface is found to be the reason of the degradation of the transport properties. Through optimizing the thickness of the SAG GaN insertion layer, 2DEG mobility is similar to the value of as-grown AlGaN/GaN heterostructure. The proper thickness of SAG GaN insertion layer for device fabrication is 24 nm referring to the variation in 2DEG transport properties.
Starting Page	9061
Ending Page	9066
Page Count	6
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	27
Issue Number	9
e-ISSN	1573482X
Language	English
Publisher	Springer US
Publisher Date	2016-05-14
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Optical and Electronic Materials Characterization and Evaluation of Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET

AlGaN/GaN HEMTS: material, processing, and characterization

A deterministic study of hot phonon effects in a 2D electron gas channel formed at an AlGaN/GaN heterointerface

Irradiation effects on AlGaN HFET devices and GaN layers

The properties of AlGaN films and AlGaN/GaN heterostructures grown on ( $$11\bar{2}0$$ ) sapphire substrates

Properties of LT-AlGaN films and HT-GaN films using LT-AlGaN buffer layers grown on (0001) sapphire substrates

Dynamical study of the radiative recombination processes in GaN/AlGaN QWs

Buffer-trapping effects on current slump in AlGaN/GaN HEMTs

A comparative study of atomic layer deposition of Al$_{2}$O$_{3}$ and HfO$_{2}$ on AlGaN/GaN

Influence of interface contamination on transport properties of two-dimensional electron gas in selective area growth AlGaN/GaN heterostructure

Similar Documents

The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET

AlGaN/GaN HEMTS: material, processing, and characterization

A deterministic study of hot phonon effects in a 2D electron gas channel formed at an AlGaN/GaN heterointerface

Irradiation effects on AlGaN HFET devices and GaN layers

The properties of AlGaN films and AlGaN/GaN heterostructures grown on ( $$11\bar{2}0$$ ) sapphire substrates

Properties of LT-AlGaN films and HT-GaN films using LT-AlGaN buffer layers grown on (0001) sapphire substrates

Dynamical study of the radiative recombination processes in GaN/AlGaN QWs

Buffer-trapping effects on current slump in AlGaN/GaN HEMTs

A comparative study of atomic layer deposition of Al$_{2}$O$_{3}$ and HfO$_{2}$ on AlGaN/GaN

Influence of interface contamination on transport properties of two-dimensional electron gas in selective area growth AlGaN/GaN heterostructure