NDLI: Numerical simulation of electrical characteristics in nanoscale Si/GaAs MOSFETs

Content Provider	Springer Nature Link
Author	Li, Yiming Chen, Wei Hsin
Copyright Year	2006
Abstract	In this paper, electrical characteristics of metal-oxide-semiconductor field effect transistor (MOSFET) with silicon/gallium-arsenic (Si/GaAs) stacked film are numerically studied. By calculating several important device characteristics, such as the on-state current, the subthreshold swing, the drain induced barrier lowering, the threshold voltage, the threshold voltage roll-off, and the output resistance, a 50 nm Si/GaAs MOSFET is simulated with respect to different thicknesses of Si/GaAs film. Compared with the results of pure Si MOSFET, Si/GaAs MOSFET shows promising characteristics after properly selecting the thickness of Si/GaAs film. Among Si, germanium (Ge), and Si/Ge MOSFETs, Si/GaAs MOSFET relatively exhibits a higher driving capability due to higher carrier mobility within the Si/GaAs film. However, quantitatively accurate estimation of device characteristics will depend upon more precise calculation of band structure of the stacked film.
Starting Page	255
Ending Page	258
Page Count	4
File Format	PDF
ISSN	15698025
Journal	Journal of Computational Electronics
Volume Number	5
Issue Number	2-3
e-ISSN	15728137
Language	English
Publisher	Kluwer Academic Publishers
Publisher Date	2006-01-01
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Electrical characteristics Silicon Gallium-arsenic MOSFET Numerical simulation Mathematical and Computational Physics ApplicationMathematics/Computational Methods of Engineering Mechanical Engineering Optical and Electronic Materials Electronic and Computer Engineering
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering Modeling and Simulation

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