NDLI: Validity of the effective potential approach for the simulation of quantum confinement effects: A Monte-Carlo study

Content Provider	Springer Nature Link
Author	Jaud, M. A. Barraud, S. Dollfus, P. Jaouen, H. Crecy, F. Carval, G.
Copyright Year	2006
Abstract	In the last years, different techniques have been proposed to include quantization effects in simulation of electron transport in nanoscale devices. The Effective Potential approach has been demonstrated as a possible correction method for describing these effects in Monte-Carlo device simulation. In this paper we discuss the numerical implementation and the actual ability of this approach to incorporating electrostatic quantum effects in the frame of an existing Monte-Carlo code (MONACO). A new methodology based on a Design-Of-Experiment is proposed for reproducing the Schrödinger-Poisson electron density profile. This original methodology allows to clearly highlight the validity limits of the Effective Potential correction for the description of quantization effects in a double-gate nMOSFET.
Starting Page	171
Ending Page	175
Page Count	5
File Format	PDF
ISSN	15698025
Journal	Journal of Computational Electronics
Volume Number	5
Issue Number	2-3
e-ISSN	15728137
Language	English
Publisher	Kluwer Academic Publishers
Publisher Date	2006-01-01
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Quantum effects Effective potential Monte-Carlo method Double-gate MOSFET Mathematical and Computational Physics ApplicationMathematics/Computational Methods of Engineering Mechanical Engineering Optical and Electronic Materials Electronic and Computer Engineering
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering Modeling and Simulation

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