NDLI: Self-consistent device simulation of a-Si p–i–n solar cells and energy resolution analyses of capture and emission processes

Content Provider	Springer Nature Link
Author	Suzuki, Azuma Yoshida, Katsuhisa Sa, buyuki
Copyright Year	2016
Abstract	A self-consistent drift–diffusion simulator coupled with the Poisson equation is developed for amorphous Si p–i–n solar cells. By employing the principle of detailed balance, the present simulator takes into account the nonequilibrium distribution functions for the trap states in the mobility-gap in a self-consistent way so that the treatment of the capture–emission processes are expected to be physically more reliable. We then investigate the physical mechanism of the capture and emission processes under photoillumination: how the trap states in the mobility-gap affect the current–voltage characteristics under p–i–n structures. It is shown that the trap states near the band-edges have much stronger impact on both the device characteristics and the conversion efficiency of photovoltaic devices, compared to those in the middle of the mobility-gap.
Starting Page	1554
Ending Page	1562
Page Count	9
File Format	PDF
ISSN	15698025
Journal	Journal of Computational Electronics
Volume Number	15
Issue Number	4
e-ISSN	15728137
Language	English
Publisher	Springer US
Publisher Date	2016-10-08
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Solar cell Device simulation Drift–diffusion a-Si Detailed balance p–i–n Diode ApplicationMathematics/Computational Methods of Engineering Electrical Engineering Theoretical, Mathematical and Computational Physics Optical and Electronic Materials Mechanical Engineering
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering Modeling and Simulation

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