NDLI: Negative differential resistance in new structures based on graphene nanoribbons

Content Provider	Springer Nature Link
Author	Sharifi, M. Akhoundi, E. Esmaili, H.
Copyright Year	2016
Abstract	Six new structures based on graphene nanoribbons are proposed, all of which show negative differential resistance (NDR) in their I–V characteristics. Electron transfer in these structures is based on intraband tunneling, interband resonant tunneling, or simple interband tunneling. The I–V characteristics of the structures are investigated using a $$\mathrm {\pi }$$ -orbital tight-binding approach and the nonequilibrium Green’s function formalism. Atomically precise doping with boron and/or nitrogen impurities as well as careful selection of nanoribbon width have been used to achieve desired energy-band structures. The introduced structures are found to offer good flexibility to fulfill circuit requirements in terms of peak/valley voltages and currents as well as high speed. In these new structures, the peak current ranges from 5.5 to 1300 nA, the peak voltage from 24 to 115 mV, the peak–valley ratio at room temperature from 34 to 8582, and the NDR width from 40 to 180 mV. Effects of different temperatures are also explored, and the results reported.
Starting Page	1361
Ending Page	1369
Page Count	9
File Format	PDF
ISSN	15698025
Journal	Journal of Computational Electronics
Volume Number	15
Issue Number	4
e-ISSN	15728137
Language	English
Publisher	Springer US
Publisher Date	2016-11-05
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Boron Doping Graphene nanoribbon Interband tunneling Negative differential resistance Nitrogen p–n junction Resonant tunneling diode ApplicationMathematics/Computational Methods of Engineering Electrical Engineering Theoretical, Mathematical and Computational Physics Optical and Electronic Materials Mechanical Engineering
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering Modeling and Simulation

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