NDLI: Design and implementation of all MOS micro-power voltage reference circuit

Content Provider	Springer Nature Link
Author	Chouhan, Shailesh Singh Halonen, Kari
Copyright Year	2014
Abstract	In this work we are proposing the all MOST based reference voltage generating circuit, which utilizes the classical principle of addition of two voltages with opposite temperature coefficients. The targeted application of the proposed circuit is a low-dropout regulator which is used in a RF energy harvesting system. The proposed voltage reference circuit is implemented using a standard 0.18 μm CMOS technology. It generates the average reference voltage of 543.658 mV with an average temperature coefficient of 17.43 ppm/°C in the temperature range of −40 to +85 °C, for the operating supply voltage ranging from 1.25 to 2 V. The maximum power consumption of the proposed architecture is ≈1.5 μW, including power dissipation in bias circuitry and the reference voltage generating core at 2 V supply voltage. The averaged measured line regulation is 1.642 mV/V. The measured power-supply rejection ratio without any filtering capacitor at 100 Hz and 1 MHz are −62.24 and −18.94 dB, respectively. Additionally, the measured noise density without any filtering capacitor at 10 Hz and 100 KHz is 20.54 and $$0.30\,μ \hbox {V}/\sqrt{\hbox{Hz}}$$ , respectively. The proposed circuit has silicon area of ≈0.007 mm2.
Starting Page	399
Ending Page	406
Page Count	8
File Format	PDF
ISSN	09251030
Journal	Analog Integrated Circuits and Signal Processing
Volume Number	80
Issue Number	3
e-ISSN	15731979
Language	English
Publisher	Springer US
Publisher Date	2014-07-23
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	All-MOS implementation Energy harvesting Voltage reference Temperature coefficient Low power Circuits and Systems Electrical Engineering Signal, Image and Speech Processing
Content Type	Text
Resource Type	Article
Subject	Surfaces, Coatings and Films Signal Processing Hardware and Architecture

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