NDLI: Temperature dependant dielectric breakdown of sputter-deposited AlN thin films using a time-zero approach

Content Provider	Springer Nature Link
Author	Schneider, Michael Bittner, Achim Schmid, Ulrich
Copyright Year	2013
Abstract	In MEMS (micro electromechanical system) devices, piezoelectric aluminum nitride (AlN) thin films are commonly used as functional material for sensing and actuating purposes. Additionally, AlN features excellent dielectric properties as well as a high chemical and thermal stability, making it also a good choice for passivation purposes for microelectronic devices. With those aspects and current trends towards minimization in mind, the dielectric reliability of thin AlN films is of utmost importance for the realization of advanced device concepts. In this study, we present results on the transversal dielectric strength of 100 nm AlN thin films deposited by dc magnetron sputtering. The dielectric strength is measured using a time-zero approach, using a fast voltage ramp to stress the film up to the point of breakdown. The measurements are performed at different device temperatures. In order to achieve statistical significance, at least 12 measurements are performed for each environment parameter set and the results are analyzed using the Weibull approach. Basically, lower breakdown fields are observed with increasing temperatures up to 300 °C with a characteristic breakdown field strength E 0 following the relationship $$\sqrt {E_{0} } \propto T$$ as reported in literature for similar measurements performed at silicon nitride thin films. From the intersection of this linear behavior, the Poole–Frenkel (PF) barrier height ϕ B is determined to 0.54 eV, which is reasonable for AlN thin films. The slope of this relation is similar to values reported for silicon nitride thin films. This allows an estimation of the breakdown field at higher temperatures by extrapolation. Leakage current measurements show a dominant PF type conduction mechanism, verifying the applicability of $$\sqrt {E_{0} } \propto T$$ . No breakdown occurs in negative field direction, which is attributed to the metal–insulator–semiconductor configuration of the sample and hence, the presence of a depletion layer forming in the n-doped silicon and dominating the leakage current behavior.
Starting Page	751
Ending Page	757
Page Count	7
File Format	PDF
ISSN	09467076
Journal	Microsystem Technologies
Volume Number	20
Issue Number	4-5
e-ISSN	14321858
Language	English
Publisher	Springer Berlin Heidelberg
Publisher Date	2013-12-13
Publisher Place	Berlin, Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Electronics and Microelectronics, Instrumentation Nanotechnology Mechanical Engineering
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering Hardware and Architecture

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