Loading...
Please wait, while we are loading the content...
Similar Documents
Electrical properties of short period InAs/GaSb superlattice.
| Content Provider | Semantic Scholar |
|---|---|
| Author | Christol, P. Konczewicz, Leszek Cuminal, Yvan Aït-Kaci, Hassan Rodriguez, Jean-Baptiste Joullié, André |
| Copyright Year | 2007 |
| Abstract | Electrical properties in the temperature range between 80 K and 300 K of type-II short period InAs/GaSb superlattice (SL) photodiode are reported. Resistivity and Hall measurements have been carried out on a 300 periods unintentionally doped SL grown on semi-insulating GaAs substrate while capacitance-voltage and current-voltage measurements have been performed on the same SL structure elaborated on n-type GaSb substrate. Whatever the electrical investigations, the behaviour of the InAs/GaSb SL versus temperature exhibited a reproducible change in type of conductivity. The SL is n-type at high temperatures range with n(300 K) = 6 × 1016 cm–3 whereas it is p-type at low temperatures with p(100 K) = 2 × 1016 cm–3. This versatile change in type of conductivity is attributed to the presence of inserted InSb layer at the InAs-GaSb interface. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Starting Page | 1494 |
| Ending Page | 1498 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| DOI | 10.1002/pssc.200674136 |
| Alternate Webpage(s) | https://hal.archives-ouvertes.fr/hal-00103689/document |
| Alternate Webpage(s) | https://doi.org/10.1002/pssc.200674136 |
| Volume Number | 4 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |