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Vertical transport in short-period InAs / GaSb superlattices
| Content Provider | Semantic Scholar |
|---|---|
| Author | Olson, Benjamin Murraya, L. M. Prineasa, J. P. Boggessa, T. F. |
| Copyright Year | 2012 |
| Abstract | TECHNICAL ABSTRACT The development of InAs/GaSb superlattices (SLs) for infrared (IR) detectors and emitters has occurred at a rapid pace in recent years. This material system has proven to be very versatile owing to the flexibility in bandgap tuning and band structure engineering. A hindrance in the development of this material system has been the relatively short minority carrier lifetime [1], but as the lifetime is extended vertical transport will become increasingly more important. Recent work with InAs/InAsSb SLs has shown significantly improved lifetimes in comparison to InAs/GaSb and potentially a new avenue for IR SL focal-plane arrays [2]. Efficient operation and fast dynamic response of these IR devices requires that the carrier transport vertically through the growth stack must be understood and optimized. This research aims to provide a non-destructive method to measure vertical transport in both mid-wave (MWIR) and long-wave (LWIR) infrared structures. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://miomd-11.northwestern.edu/technical/speakers/18C0CA66-F92C-15E0-480317A4D5FC2FBF.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
