Loading...
Please wait, while we are loading the content...
Similar Documents
Electrical performance of InAs/AlSb/GaSb superlattice photodetectors
| Content Provider | Semantic Scholar |
|---|---|
| Author | Tansel, T. Hostut, M. Elagoz, Sezai Kılıç, Ali Ergun, Yavuz Aydınlı, Atilla |
| Copyright Year | 2016 |
| Abstract | Abstract Temperature dependence of dark current measurements is an efficient way to verify the quality of an infrared detector. Low dark current density values are needed for high performance detector applications. Identification of dominant current mechanisms in each operating temperature can be used to extract minority carrier lifetimes which are highly important for understanding carrier transport and improving the detector performance. InAs/AlSb/GaSb based T2SL N-structures with AlSb unipolar barriers are designed for low dark current with high resistance and detectivity. Here we present electrical and optical performance of such N-structure photodetectors. |
| Starting Page | 1 |
| Ending Page | 7 |
| Page Count | 7 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/j.spmi.2015.12.034 |
| Alternate Webpage(s) | http://repository.bilkent.edu.tr/bitstream/handle/11693/26507/bilkent-research-paper.pdf;jsessionid=9E1628347606198CE6117DDC2554FC87?sequence=1 |
| Alternate Webpage(s) | http://www.openaccess.hacettepe.edu.tr:8080/xmlui/bitstream/handle/11655/19006/2411.pdf?isAllowed=y&sequence=2 |
| Alternate Webpage(s) | https://doi.org/10.1016/j.spmi.2015.12.034 |
| Volume Number | 91 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
