Loading...
Please wait, while we are loading the content...
Similar Documents
Spectroscopic Ellipsometry Analysis of Rapid Thermal Annealing Effect on MBE Grown GaAs1-x-Nx
| Content Provider | Semantic Scholar |
|---|---|
| Author | Sedrine, Nebiha Ben Rihani, Jehan Harmand, Jean-Christophe Chtourou, Radhouane |
| Copyright Year | 2009 |
| Abstract | We report on the effect of rapid thermal annealing (RTA) on GaAs1−xNx layers, grown by molecular beam epitaxy (MBE), using room temperature spectroscopic ellipsometry (SE). A comparative study was carried out on a set of GaAs1−xNx as-grown and the RTA samples with small nitrogen content (x = 0.1%, 0.5% and 1.5%). Thanks to the standard critical point model parameterization of the GaAs1−xNx extracted dielectric functions, we have determined the RTA effect, and its nitrogen dependence. We have found that RTA affects more samples with high nitrogen content. In addition, RTA is found to decrease the E1 energy nitrogen blueshift and increase the broadening parameters of E1 , E1 +∆1 , E ′ 0 and E2 critical points. Keywords— GaAs1−xNx , optical constants, optoelectronic device, rapid thermal annealing, semiconductors, spectroscopic el- |
| Starting Page | 51 |
| Ending Page | 56 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://www.itl.waw.pl/czasopisma/JTIT/2009/1/51.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
