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Study of rapid thermal annealing effect on CdZnO thin films grown on Si substrate
| Content Provider | Semantic Scholar |
|---|---|
| Author | Li, Liangbin Yang, Zheng Zuo, Zheng Kong, Ju Liu, Jianlin |
| Copyright Year | 2010 |
| Abstract | CdZnO thin films were grown on Si (100) substrates by plasma-assisted molecular beam epitaxy. As-grown samples show near band edge emissions at 1.87, 2.03, and 2.16 eV, respectively, while the emission peak energy dramatically increases to up to ultraviolet region with increasing rapid thermal annealing temperature. Room temperature photoluminescence (PL), and temperature dependent PL show phase separations in the samples after the annealing process. Secondary ion mass spectroscopy measurements show redistribution of Cd in the as-annealed sample, which is believed to be the reason of PL peaks shift. |
| File Format | PDF HTM / HTML |
| DOI | 10.1116/1.3374435 |
| Alternate Webpage(s) | https://www.ece.uic.edu/~zyang/Publications/Downloads/Papers/J0049-ZhengYang.pdf |
| Alternate Webpage(s) | https://doi.org/10.1116/1.3374435 |
| Volume Number | 28 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
