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Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al2O3 gate dielectric
| Content Provider | Semantic Scholar |
|---|---|
| Author | Shahrjerdi, Davood Akyol, Tarık Ramon, Michael Garcia-Gutierrez, Domingo Ixcóatl Tutuc, Emanuel Banerjee, Sanjay K. |
| Copyright Year | 2008 |
| Abstract | In this letter, we report fabrication of self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor (MOS) field-effect transistors with atomic layer deposition of Al2O3 gate dielectric directly on GaAs substrates using a simple ex situ wet clean of GaAs. Thermal stability of the gate stack was examined by monitoring the frequency dispersion behavior of GaAs MOS capacitors under different annealing conditions. A maximum drive current of ∼4.5μA∕μm was obtained for a gate length of 20μm at a gate overdrive of 2.5V. The threshold voltage and subthreshold slope were determined to be ∼0.4V and ∼145mV∕dec from the corresponding Id-Vg characteristics. |
| Starting Page | 203505 |
| Ending Page | 203505 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.2931708 |
| Volume Number | 92 |
| Alternate Webpage(s) | http://engineering.nyu.edu/nanolab/sites/engineering.nyu.edu.nanolab/files/uploads/APL2%202008.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.2931708 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
