Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric

Content Provider	Semantic Scholar
Author	Lin, Huan Chang Yang, Tai Sharifi, Hasan Kim, Seong Min Xuan, Yi Shen, T. Mohammadi, Saeed Ye, Peide D.
Copyright Year	2007
Abstract	Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with ex situ atomic-layer-deposited Al2O3 as gate dielectrics are studied. Maximum drain currents of 211 and 263mA∕mm are obtained for 1μm gate-length Al2O3 MOS-HEMTs with 3 and 6nm thick gate oxide, respectively. C-V characteristic shows negligible hysteresis and frequency dispersion. The gate leakage current density of the MOS-HEMTs is 3–5 orders of magnitude lower than the conventional HEMTs under similar bias conditions. The drain current on-off ratio of MOS-HEMTs is ∼3×103 with a subthreshold swing of 90mV/decade. A maximum cutoff frequency (fT) of 27.3GHz and maximum oscillation frequency (fmax) of 39.9GHz and an effective channel mobility of 4250cm2∕Vs are measured for the 1μm gate-length Al2O3 MOS-HEMT with 6nm gate oxide. Hooge's constant measured by low frequency noise spectral density characterization is 3.7×10−5 for the same device.
Starting Page	212101
Ending Page	212101
Page Count	1
File Format	PDF HTM / HTML
DOI	10.1063/1.2814052
Volume Number	91
Alternate Webpage(s)	http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1236&context=nanopub
Alternate Webpage(s)	https://engineering.purdue.edu/~yep/Papers/ApplPhysLett_91_GaAs%20MOSHEMT_Dennis.pdf
Alternate Webpage(s)	https://doi.org/10.1063/1.2814052
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article